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Brand Name : original
Model Number : IRLML5103TRPBF
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T
Supply Ability : 1000
Delivery Time : 3-5ddays
Packaging Details : carton box
FET Type : P-Channel
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.1 nC @ 10 V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 75 pF @ 25 V
Power Dissipation (Max) : 540mW (Ta)
IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW
MOSFET P-CH 30V 760MA SOT23
Specifications of IRLML5103TRPBF
| TYPE | DESCRIPTION |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | IRLML5103 |
Features of IRLML5103TRPBF
* Generation V Technology
* UltraLow On-Resistance
* P-ChannelMOSFET
* SOT-23 Footprint
* Low Profile (<1.1mm)
* Available in Tape and Reel
* Fast Switching
* Lead-Free
* RoHS Compliant, Halogen-Free
Descriptions of IRLML5103TRPBF
FifthGeneration HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
Environmental & Export Classifications of IRLML5103TRPBF
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |

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IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW Images |