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IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW

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IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW

Brand Name : original

Model Number : IRLML5103TRPBF

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 1000

Delivery Time : 3-5ddays

Packaging Details : carton box

FET Type : P-Channel

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 760mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 600mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 5.1 nC @ 10 V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 75 pF @ 25 V

Power Dissipation (Max) : 540mW (Ta)

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IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW

MOSFET P-CH 30V 760MA SOT23

Specifications of IRLML5103TRPBF

TYPE DESCRIPTION
Category Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V
FET Feature -
Power Dissipation (Max) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number IRLML5103


Features of IRLML5103TRPBF

* Generation V Technology
* UltraLow On-Resistance
* P-ChannelMOSFET
* SOT-23 Footprint
* Low Profile (<1.1mm)
* Available in Tape and Reel
* Fast Switching
* Lead-Free
* RoHS Compliant, Halogen-Free


Descriptions of IRLML5103TRPBF


FifthGeneration HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.


Environmental & Export Classifications of IRLML5103TRPBF

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW


Quality IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW for sale

IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW Images

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