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Brand Name : original
Model Number : FDV301N
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T
Supply Ability : 1000
Delivery Time : 3-5ddays
Packaging Details : carton box
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 25 V
25 V : 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.7V, 4.5V
Rds On (Max) @ Id, Vgs : 4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id : 1.06V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.7 nC @ 4.5 V
Vgs (Max) : ±8V
FDV301N N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Specifications of FDV301N
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.06V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDV301 |
Features of FDV301N
• 25 V, 0.22 A Continuous, 0.5 A Peak
♦ RDS(on) = 5 @ VGS = 2.7 V
♦ RDS(on) = 4 @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model
• Replace Multiple NPN Digital Transistors with One DMOS FET
• This Device is Pb−Free and Halide Free
Applications of FDV301N
This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
Environmental & Export Classifications of FDV301N
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |

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FDV301N N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 Images |