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EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW

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EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW

Brand Name : original

Model Number : EMD4DXV6T1G

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 1000

Delivery Time : 3-5ddays

Packaging Details : carton box

Current - Collector (Ic) (Max) : 100mA

Voltage - Collector Emitter Breakdown (Max) : 50 V

Resistor - Base (R1) : 47kOhms, 10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA

Current - Collector Cutoff (Max) : 500nA

Power - Max : 500mW

Mounting Type : Surface Mount

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EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW

Specifications of EMD4DXV6T1G

TYPE DESCRIPTION
Category Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Mfr onsemi
Series -
Package Tape & Reel (TR)
Cut Tape (CT)
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms, 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Base Product Number EMD4DXV6


Features of EMD4DXV6T1G


• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices


Applications of EMD4DXV6T1G


The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor.

Environmental & Export Classifications of EMD4DXV6T1G

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095


EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW


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EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW Images

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